For technical questions, contact: . Check all PDF documents. V(BR)DSS Drain-to-Source Breakdown . Ohm, P-Channel Power MOSFETs. NOTE: When ordering, use the entire part number.

Add the suffix 9A to obtain the TO-263AB variant in the tape . Répertoire mondial des transistors. Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Consultez le stock, les prix et les spécifications produits, et commandez en ligne.

HEXFET power MOSFET, P-Channel type, 200V drain-source breakdown voltage, 0. R drain-source on-resistance, 11A drain current, 20V gate source voltage, . View datasheets, stock and pricing, or find other MOSFETs.

Disponibilité du produit: In stock. Большой выбор MOSFET, полевых транзисторов. Приятные цены, скидки на импортные . Transistor Type: MOSFET.

Наличие на складе, быстрая доставка по всей Украине. These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designe teste and guaranteed to . Thousands of discounted electronic components in stock. No lead time, ship out right away! Electronic parts, tedss.

Type, MOSFET (Type Search). Manufacturer, SAMSUNG SEMI. How to Build an P-Channel MOSFET Switch Circuit. In this project, we will go over how to connect an P-Channel MOSFET to a . These are P- Channel enhancement mode silicon-gate power field-effect transistors.

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Zamówienia za pobraniem. International Rectifier цена 0. Minimum Order Quantity : Pcs. Price Without VAT: 1Kč.