Fifth Generation HEXFETs from International Rectifier utilize advanced processing . Mouser propose le catalogue, la tarification et les fiches . Id=-40A) ,alldatasheet, Fiche . Répertoire mondial des transistors. Les principales caractéristique des transistors bipolaires. Caractéristiques techniques.

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Uds: 1V, Idss: A, Pd: 2W, Rds: Ohm Unipolární tranzistor P-Kanál, Provedení: Vývodové, Idss = A, Vds = 1V, Pd = 2W, Rds = Ohm, . P-MOS 100V 40A 200W 06R TO220AB.

P-mosfet ch 100v 40a 200w 0. P-Ch 100V 40A 200W 06R TO220AB. P-Channel Power MOSFET 100V to 150V, Infineon. Disponibilité du produit: In stock. Pd – Power Dissipation : 2W. Mounting Style : Through Hole.

Qg – Gate Charge : 1nC. Utsource fournit les produits les plus complets pour le monde entier Circuits Intégrés,à bas prix, haute . Type, Circuits intégrés logiques. Once you know, you Newegg! Find the PDF Datasheet, Specifications and Distributor Information. Mouser bietet Lagerbestände, Stückpreise und Datenblätter für . Filter by: Free Shipping.

Техническая документация. Дополнительная информация. Gate to Source Voltage (Vgs). Drain to Source Voltage (Vdss).