Irfz34n

Mouser propose le catalogue, la tarification et les fiches . Id=26A) ,alldatasheet, Fiche . Répertoire mondial des transistors. Les principales caractéristique des transistors bipolaires. Caractéristiques techniques.

Mosfet Irfz34N To-220Abn-Channel 55V. Datasheet (data sheet) search for . Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low. Большой выбор MOSFET , полевых транзисторов. Приятные цены, скидки на импортные. Функциональное назначение: мощный.

IRFZ34N from International Rectifier. Package: TO-220AB, 1-gate, 2-drain, – sourse, 4-drain.

Browse our latest MOSFET Transistors offers. Nom du produit : MOSFET. VDSS : V, consommation de courant continu : A. Montage diamètre du trou : mm, taille de la mèche . C Qg, TO- 220AB fiche technique, inventaire et tarifs. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. View datasheets, check stock and pricing, and search for MOSFET.

Uds: V, Idss: A, Pd: W, Rds: Ohm Unipolární tranzistor N-Kanál, Provedení: Vývodové, Idss = A, Vds = V, Pd = W, Rds = Ohm, . Commandez maintenant en ligne! Advanced Process Technology. Encontre Transistor Irfz34n – Transistores no Mercado Livre Brasil.

Free delivery on eligible orders of £or more. Enhancement Mode High Speed Switch. NTE Data Sheet Data Sheet. Ultra Low On-Resistance.

Технические описания и . Grupa, TRANZYSTORY MOSFET.

Opis, TRANZYSTOR N- MOS 55V 30A 90W TO220. Encontrá Transistor Irfz34n en Mercado Libre Argentina. Descubrí la mejor forma de comprar online.