Id=-23A) ,alldatasheet, Fiche. Mouser propose le catalogue, la tarification et les fiches . Parameters and Characteristics. Electronic Component Catalog.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Datasheet (data sheet) search for .
You may have misunderstood the parameter Vgsth To turn on Vs – Vg needs to be comfortably greater . Read about company and get contact details and . Commandez maintenant en ligne! ATTENTION INTERNATIONAL BUYERSInternational Buyers – Please . Transistor Polarity: P Channel. Free delivery on eligible orders of £or more. Para mais informações, entre em contato.
MOSFET MOSFT PCh -100V -23A 117mOhm 64.
Manufacturer: International Rectifier. This device comes in TO-220 . Основные характеристики . Na płytce prototypowej gdzie . If gate is trigged with grond. The load is connected to drains.
Техническая документация. P-канальный Полевой транзистор. Source to Vcc make 0v at Gate :result fail. PartNo, Replacement, Repl. Функциональное назначение: мощный.
Source-Drain Ratings and Characteristics. Power Dissipation Pd:94W Pulse Current Idm:76A Voltage Vgs Rds on Measurement:-10V. VDSS = -100V, RDS(on) = 0. Ohm, ID = -23A in 3-pin TO-220AB package. Operational temperature range from -° C . Vous voulez recycler votre appareil électrique ou électronique gratuitement ?
Minimum Order Quantity : Pcs. Price Without VAT: 1Kč. However from data sheet, it did not mention minimum gate current to drive this .