Fifth Generation HEXFETs from International Rectifier utilize advanced processing . Id=-31A) ,alldatasheet, Fiche . Type de boîtier (semi-conducteur), TO-263-3. Fabricant, Infineon Technologies. Date de disponibilité: Share.

W TO-263– makkelijk vanuit huis online bestellen – bij Conrad.

Available schematic symbol, footprint and datasheet specification. Commandez maintenant en ligne! P-MOS 55V 31A 110W 06R TO220AB. Breakdown On-State Drain Current Dnient Mac. Port Woltage Resistance 25°C Resistance Dissipation Demand Outline.

View datasheets, check stock and pricing, and search for MOSFET. INTERNATIONAL RECTIFIER. Descubrí la mejor forma de comprar online.

Power MOSFET, TO-22 V, A . Disponibilité du produit: In stock. Info source: IRF web-site. Название (производитель), Доступно для заказа, Цена, руб.

Source-Drain Ratings and Characteristics. Функциональное назначение: мощный. To Our Valued Customer: As always we appreciate your use of International Rectifier semiconductor products.

Our commitment to customer . Пороговое напряжение на затворе. Техническая документация. Дополнительная информация. VDSS = -55V, RDS(on) = 0. Ohm, ID = – 31A in 3-pin TO-220AB package. Operational temperature range from -° C to . Field Effect Transistor.

Metal Oxide Semiconductor. View from pin side: View from pin side:.

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