ABSOLUTE MAXIMUM RATINGS (TC = °C, unless otherwise noted). These are N- Channel enhancement mode silicon gate power field effect transistors. N−Channel Enhancement−Mode Silicon. Transistor de puissance IRF530.
VGS, Gate-to-Source Voltage (volts). IMPORTANT – READ BEFORE DOWNLOADING, COPYING, INSTALLING, OR USING.
DO NOT DOWNLOA COPY, INSTALL, OR USE . Consultez le stock, les prix et les spécifications produits, et commandez en ligne. Commandez maintenant en ligne! Check stock and pricing, view product specifications, and order online. IRF 5N – power MOSFETs,. View datasheets, stock and pricing, or find other MOSFETs.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted). Ohm, N-Channel Power MOSFET.
Ultra Low On-Resistance. My main goal is to power some resistance wire for a . Mosfet N-FET tranzistor IRF530. E-shop: více než kusů, . IRF5) que nous avait conseillé F5HD M. N – CHANNEL ENHANCEMENT MODE. Product Code: EM1-0Category: Semiconductors . Encontre Irf 5no Mercado Livre Brasil. Drain-source Voltage ( VGS = 0).
Ohm – 14A TO-2Low Gate Charge StripFET ii Power MOSFET N-CHANNEL 14A TO-2LOW GATE CHARGE STripFETTM . Uds: 1V, Idss: A, Pd: W, Rds: Ohm Unipolární tranzistor N-Kanál, Provedení: Vývodové, Idss = A, Vds = 1V, Pd = W, Rds = Ohm, . Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized . Большой выбор MOSFET, полевых транзисторов. Приятные цены, скидки на импортные транзисторы. Collated and Edited by 4Z4TJ. Believed to be accurate.
Use entirely at your own risk.
Gyártói jelölés, IRF530PBF. Read what people are saying and join the conversation. Tranzisztor típusa, N-MOSFET. Equivalência de transistores, circuitos integrados, diodos IRF530.