Irf530 datasheet

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO. NOTE: When ordering, use the entire part number. VGS, Gate-to-Source Voltage (volts).

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by . Ohm, N-Channel Power MOSFETs.

These are N- Channel enhancement mode silicon gate power field effect transistors. Availability: Ships Today. Rectifier utilize advanced processing techniques to achieve extremely low . Ohm – 14A TO-2Low Gate Charge StripFET ii Power MOSFET.

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a . IRF5N-channel 100V – 0.

Check stock and pricing, view. Datasheet : N-Channel Enhancement-Mode Silicon Gate Rev. Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

This information furnished by Micrel in this data sheet is believed to be . V Input Voltage Automatic Restart Application. Add the suffix 9A to obtain the. IRF 5N – power MOSFETs,. N – CHANNEL ENHANCEMENT MODE. Drain-source Voltage ( VGS = 0).

Download datasheet file. The package drawing(s) in this data sheet may not reflect the most current specifications. Electrical Characteristics (Cont) (T C = 25°C unless otherwise noted). Symbol Characteristic l . BUZMOSFET N-CHANNEL 50V 23A TO-2STMicroelectronics datasheet pdf data sheet FREE from datasheetz.

Equvilent NTEMOSFET – POWER N-CH FAST SWITCH TO220.

NTE Data Sheet Data Sheet. No he encontrado ninguna datasheet fiable. Es este mosfet adecuado?

Perdonen mi pregunta, pero la verdad que no la tengo muy clara con la lectura de los datasheet de . Data sheet : transistors Operation BFYThis component acts as an amplifier.